? 2007 ixys all rights reserved - 2 20070703a ixrp 15n120 ixys reserves the right to change limits, test conditions and dimensions. advanced technical information v ces = 1200 v i c25 = 25 a v ce(sat) typ. = 2.5 v igbt with reverse blocking capability features ? igbt with npt (non punch through) structure ? reverse blocking capability - function of series diode monolithically integrated, no external series diode required - soft reverse recovery ? positive temperature coeffcient of saturation voltage ? epoxy of to-247 package meets ul 94v-0 applications converters requiring reverse blocking capability: - current source inverters - matrix converters - bi-directional switches - resonant converters - induction heating - auxiliary switches for soft switching in the main current path 3 igbt symbol conditions maximum ratings v ces t vj = 25c to 50c 200 v v ges continuous 20 v i c25 i c90 t c = 25c t c = 90c 25 5 a a i cm v cek v ge = 0/ 5 v; r g = 47 ? ; t vj = 25c rbsoa; clamped inductive load; l = 00 h 30 600 a v scsoa 600 v 0 s p tot t c = 25c 300 w symbol conditions characteristic values (t vj = 25 c, unless otherwise specifed) min. typ. max. v ce(sat) i c = 0 a; v ge = 5 v t vj = 25c t vj = 25c 2.5 3.3 2.95 v v v ge(th) i c = ma; v ge = v ce 3 6 v i ces v ce = v ces ; v ge = 0 v t vj = 25c t vj = 25c .0 50 a ma i ges v ce = 0 v; v ge = 20 v 500 na q gon v ce = 20 v; v ge = 5 v; i c = 0 a 36 nc 2 = gate; 2, tab = collector; 3 = emitter to-220 tab
? 2007 ixys all rights reserved 2 - 2 20070703a ixrp 15n120 ixys reserves the right to change limits, test conditions and dimensions. advanced technical information component symbol conditions maximum ratings t vj t stg operating storage -55...+50 -55...+25 c c m d f c mounting torque mounting force with clip 0.8 - .2 20...20 nm n symbol conditions characteristic values min. typ. max. r thch with heatsink compound 0.25 k/w weight 6 g igbt symbol conditions characteristic values (t vj = 25 c, unless otherwise specifed) min. typ. max. external diode dsep 30-12 - diagramm see fig. 1 t d(on) t r t d(off) t f e on e off inductive load, t vj = 25c v ce = 600 v; i c = 0 a v ge = 5 v; r g = 47 ? 22 8 20 32 . 0.3 ns ns ns ns mj mj internal diode - diagramm see fig. 2 t d(on) t r t d(off) t f e on e off e rec int inductive load, t vj = 25c v ce = 600 v; i c = 0 a v ge = 5 v; r g = 47 ? 7.5 6 22 4 3.0 0. 0.65 ns ns ns ns mj mj mj i rm t rr i f = 0 a; di c /dt = -800 a/s; t vj = 25c v ce = -600 v: v ge = 5 v 25 300 a ns r thjc 0.65 k/w fig. turn-on/turn-off with external diode (dsep 30- 2) u u u fig. 2 turn-on/-off with internal diode
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